Barrier Metal DPT Material Electrode Material Etch Hard Mask film GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN Barrier Metal(확산방지막재료)은 Metallization 형성 시, Metal Ion 또는 산소, 수분 등이 층간 절연막으로 확산됨으로 인해 절연막이 오염되는 것을 방지하기 위한 재료입니다. Al과 Cu같은 Metallization Metal은 주위 절연막과 쉽게 반응하여 반도체 소자의 신뢰성을 떨어뜨리는 주요 원인이 되기 때문에 미세화 될수록 확산방지막의 사용이 점점 중요해지고 있습니다. 확산방지막은 전기를 통하면서 확산방지 성격을 가져야 하므로 Ti(N), Ta(N), Ru 등을 사용합니다. PRODUCT 4MS Tetramethylsilane 자세히보기 Ru(EtCp)2 Bis(ethylcyclopentadienyl)Ruthenium 자세히보기 Ru-4 Ru(η6-p-Cymene)(η4-1,3-cyclohexadiene) 자세히보기 TBTDETa (t-butylimido)tris(diethylamido)Tantalum 자세히보기 TBTEMTa (t-butylimido)tris(ethylmethylamido)Tantalum 자세히보기 TDMAT Tetrakis(dimethylamido)titanium(IV) 자세히보기 TiCl4 Titanium tetrachloride 자세히보기 4MS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tetramethylsilane Chemical formula C4H12Si formula weight (g/mol) 88.22 Boiling point (℃) 26~28 Vapor pressure (℃/torr) - Phase Colorless Liquid Water reactivity Stable 닫기 Ru(EtCp)2 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Bis(ethylcyclopentadienyl)Ruthenium Chemical formula C14H18Ru formula weight (g/mol) 287.37 Boiling point (℃) 267 Vapor pressure (℃/torr) 90 / 0.34 Phase Yellow liquid Water reactivity React slowly 닫기 Ru-4 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Ru(η6-p-Cymene)(η4-1,3-cyclohexadiene) Chemical formula C16H22Ru formula weight (g/mol) 315.23 Boiling point (℃) 290 Vapor pressure (℃/torr) 134 / 1.0 Phase Yellow liquid Water reactivity React slowly 닫기 TBTDETa Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. (t-butylimido)tris(diethylamido)Tantalum Chemical formula C16H39N4Ta formula weight (g/mol) 468.46 Boiling point (℃) 95 / 0.5 Vapor pressure (℃/torr) 120 / 1.0 Phase Pale yellow liquid Water reactivity React Violently 닫기 TBTEMTa Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. (t-butylimido)tris(ethylmethylamido)Tantalum Chemical formula C13H33N4Ta formula weight (g/mol) 426.38 Boiling point (℃) 88 / 0.1 Vapor pressure (℃/torr) 95 / 1.8 Phase Pale yellow liquid Water reactivity React Violently 닫기 TDMAT Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tetrakis(dimethylamido)titanium(IV) Chemical formula C8H24N4Ti formula weight (g/mol) 224.18 Boiling point (℃) 225 Vapor pressure (℃/torr) 25 / 0.1 Phase Pale yellow liquid Water reactivity React Violently 닫기 TiCl4 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Titanium tetrachloride Chemical formula TiCl4 formula weight (g/mol) 189.69 Boiling point (℃) 136.4 Vapor pressure (℃/torr) 20 / 9.75 Phase Colorless liquid Water reactivity React Violently 닫기
