Barrier Metal DPT Material Electrode Material Etch Hard Mask film GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN 반도체 소자는 전기적 간섭을 막기위해 STI, IMD, PMD와 같은 Cell간, 층간 절연물질을 필요로 합니다. 절연막에 발생된 미세한 void가 Gate 간 Short를 유발하므로 선폭이 미세화될수록 절연물질의 중요성이 더욱 커지고 있습니다. 따라서, 기존의 CVD 방식으로 증착 되던 절연물질이 SOD 방식으로 Coating되고 있으며, 물질 또한 Coating 공정에 맞게 변화하고 있습니다. PRODUCT D2S2 Bis(ethylmethylamino)silane 자세히보기 PS Polysilazane 자세히보기 TIPAS Tris(isopropylmino)silane 자세히보기 Tri-DMAS Tris(dimethylamino)Silane 자세히보기 D2S2 Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Bis(ethylmethylamino)silane Chemical formula C6H18N2S formula weight (g/mol) 146.3 Boiling point (℃) 134 Vapor pressure (℃/torr) 25 / 5.63 Phase Colorless Liquid Water reactivity Slowly react 닫기 PS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Polysilazane Chemical formula [SiH2-NH]n formula weight (g/mol) 5000~6000 Boiling point (℃) - Vapor pressure (℃/torr) - Phase Colorless Liquid Water reactivity Slowly react 닫기 TIPAS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tris(isopropylmino)silane Chemical formula C9H25N3Si formula weight (g/mol) 203.4 Boiling point (℃) 170 Vapor pressure (℃/torr) 20 / 1.2 Phase Colorless Liquid Water reactivity Violently react 닫기 Tri-DMAS Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tris(dimethylamino)Silane Chemical formula C6H19N3Si formula weight (g/mol) 161.3 Boiling point (℃) 145 Vapor pressure (℃/torr) 25 / 7 Phase Colorless Liquid Water reactivity Slowly react 닫기
