Barrier Metal DPT Material Electrode Material Etch Hard Mask film GST Material Gap Fill Material High-k for Capacitor High-k for Metal Gate Low-k Metallization Metal SiO2 / SiN PRAM은 Flash Memory와 같은 비휘발성 저장 능력을 가짐과 동시에, DRAM과 같이 고집적성을 띠므로 고속 동작이 가능하며, 낮은 소비전력을 구현하는 차세대 Memory Device입니다. GST Precursors는 이러한 PRAM에 쓰이는 기억 소자 물질의 Ge2Sb2Te5라는 상 변화 물질의 재료가 됩니다. PRODUCT BDMEDAGe Bis(dimethylethylenediamine)Germanium 자세히보기 TDMAGe Tetrakis(dimethylamido)Germanium 자세히보기 TDMASb Tetrakis(dimethylamido)Antimony 자세히보기 TEMAGe Tetrakis(ethylmethylamido)Germanium 자세히보기 BDMEDAGe Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Bis(dimethylethylenediamine)Germanium Chemical formula C8H20N4Ge formula weight (g/mol) 244.88 Boiling point (℃) 214 Vapor pressure (℃/torr) 32 / 0.5 Phase Colorless liquid Water reactivity Slowly react 닫기 TDMAGe Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tetrakis(dimethylamido)Germanium Chemical formula C8H24N4G formula weight (g/mol) 248.73 Boiling point (℃) 203 Vapor pressure (℃/torr) 50 / 3.0 Phase Colorless liquid Water reactivity React Violently 닫기 TDMASb Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tetrakis(dimethylamido)Antimony Chemical formula C6H18N3Sb formula weight (g/mol) 253.81 Boiling point (℃) 207 Vapor pressure (℃/torr) 40 / 4.9 Phase Colorless liquid Water reactivity React Violently 닫기 TEMAGe Chemical name, Chemical formula, formula weight (g/mol), Boiling point (℃), Vapor pressure (℃/torr), Phase, Water reactivity Chemical name. Tetrakis(ethylmethylamido)Germanium Chemical formula C12H32N4Ge formula weight (g/mol) 305.05 Boiling point (℃) 260 Vapor pressure (℃/torr) 60 / 0.52 Phase Colorless liquid Water reactivity React Violently 닫기
